Benefiting from the Evolution in Power Transistors

2 messages · 2018-11-24T11:37:46-05:00 → 2018-11-24T14:35:31-08:00

[1/2] Benefiting from the Evolution in Power Transistors

2018-11-24T11:37:46-05:00 · Bob Paddock <[email protected]>
Message-ID: <CAPYb0EFi74xVZ2jFd33Pz_c9_dQ75CPvQmox=cyCXmnV_gTYFw@mail.gmail.com>
One of the other treads was discussing the destruction of MOSFETs,
which motivated me to write these few posts, where I normally just
lurk here.

Related to my Magick Smoke post.

Benefiting from the Evolution in Power Transistors, such as Gate
Injection Transistors and Cascode Silicon Carbide Transistors.

Gate Injection Transistor:

https://www.mouser.com/applications/wide-bandgap-gan-transistor/

"Panasonic PGA26E X-GaN Power Transistors

Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V
Gallium Nitride power devices based on Gate Injection Transistor (GiT)
technology. PGA26E X-GaN power devices deliver Normally-Off operation
with extremely high-speed switching characteristics and zero recovery
loss.

FEATURES
Crystal growth of X-GaN on 6" silicon substrate
600V enhancement mode power switch
Normally-Off operation with a single X-GaN device by proprietary Gate
Injection Transistor (GIT) technology
Extremely high-speed switching characteristics
Zero recovery loss characteristics"

See the GiT link:
https://www.mouser.com/Panasonic/Semiconductors/Discrete-Semiconductors/Transistors/Newest-Products/_/N-ax1rp?P=1z13zdy

See also, look for Panasonic:
http://www.bodospower.com/restricted/downloads/bp_2014_07.pdf
http://www.bodospower.com/restricted/downloads/bp_2017_02.pdf
http://www.bodospower.com/restricted/downloads/bp_2017_05.pdf
http://www.bodospower.com/pdf/bp_2018_07.pdf

----------------------------------------

Cascode Silicon Carbide Transistors:

"Benefiting from the Evolution in Power Transistors"

and

"A Novel Circuit Topology for Turning a ‘Normally On’ GaN Transistor
into ‘Normally Off’ that Can be Driven by Popular Drivers":

https://www.bodospower.com/restricted/downloads/bp_2018_06.pdf

See http://unitedsic.com for related parts and applications notes such as:

"Cascode Configuration Eases Challenges of Applying SiC JFETs"
http://unitedsic.com/wp-content/uploads/2017/01/USCi_AN0004-Cascode-Configuration-Eases-Challenges-of-Applying-SiC-JFETs.pdf

Order from:
https://www.mouser.com/search/refine.aspx?N=4248705613


-- 
http://blog.softwaresafety.net/
http://www.designer-iii.com/
http://www.wearablesmartsensors.com/
Bob,

I was talking to a designer of a switching RF amp the other day.  I
asked him if he tried the new SiC chips rather than the MOSFET he uses
for the output.  He said he had tried a bunch but they don't last.  I
looked at his favorite FET datasheet and between the gate and source is
a pair of counter facing series zeners build into the wafer. I asked did
you try putting similar on the board, no he said space was lacking.

So if anybody is losing the magic smoke I suggest they try the Zener
trick and Ole can likely tell us the proper name of this protection
topology rather than smoke saver.

On 11/24/2018 8:37 AM, Bob Paddock [email protected] [EVGRAY] wrote:
>  
>
> One of the other treads was discussing the destruction of MOSFETs,
> which motivated me to write these few posts, where I normally just
> lurk here.
>
> Related to my Magick Smoke post.
>
> Benefiting from the Evolution in Power Transistors, such as Gate
> Injection Transistors and Cascode Silicon Carbide Transistors.
>
> Gate Injection Transistor:
>
> https://www.mouser.com/applications/wide-bandgap-gan-transistor/
>
> "Panasonic PGA26E X-GaN Power Transistors
>
> Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V
> Gallium Nitride power devices based on Gate Injection Transistor (GiT)
> technology. PGA26E X-GaN power devices deliver Normally-Off operation
> with extremely high-speed switching characteristics and zero recovery
> loss.
>
> FEATURES
> Crystal growth of X-GaN on 6" silicon substrate
> 600V enhancement mode power switch
> Normally-Off operation with a single X-GaN device by proprietary Gate
> Injection Transistor (GIT) technology
> Extremely high-speed switching characteristics
> Zero recovery loss characteristics"
>
> See the GiT link:
> https://www.mouser.com/Panasonic/Semiconductors/Discrete-Semiconductors/Transistors/Newest-Products/_/N-ax1rp?P=1z13zdy
>
> See also, look for Panasonic:
> http://www.bodospower.com/restricted/downloads/bp_2014_07.pdf
> http://www.bodospower.com/restricted/downloads/bp_2017_02.pdf
> http://www.bodospower.com/restricted/downloads/bp_2017_05.pdf
> http://www.bodospower.com/pdf/bp_2018_07.pdf
>
> ----------------------------------------
>
> Cascode Silicon Carbide Transistors:
>
> "Benefiting from the Evolution in Power Transistors"
>
> and
>
> "A Novel Circuit Topology for Turning a ‘Normally On’ GaN Transistor
> into ‘Normally Off’ that Can be Driven by Popular Drivers":
>
> https://www.bodospower.com/restricted/downloads/bp_2018_06.pdf
>
> See http://unitedsic.com for related parts and applications notes such as:
>
> "Cascode Configuration Eases Challenges of Applying SiC JFETs"
> http://unitedsic.com/wp-content/uploads/2017/01/USCi_AN0004-Cascode-Configuration-Eases-Challenges-of-Applying-SiC-JFETs.pdf
>
> Order from:
> https://www.mouser.com/search/refine.aspx?N=4248705613
>
> -- 
> http://blog.softwaresafety.net/
> http://www.designer-iii.com/
> http://www.wearablesmartsensors.com/
>
>