Benefiting from the Evolution in Power Transistors
2
messages
·
2018-11-24T11:37:46-05:00
→
2018-11-24T14:35:31-08:00
← Previous
Page 1 of 1
Next →
[1/2] Benefiting from the Evolution in Power Transistors
2018-11-24T11:37:46-05:00
·
Bob Paddock
<[email protected]>
Message-ID:
<CAPYb0EFi74xVZ2jFd33Pz_c9_dQ75CPvQmox=cyCXmnV_gTYFw@mail.gmail.com>
One of the other treads was discussing the destruction of MOSFETs, which motivated me to write these few posts, where I normally just lurk here. Related to my Magick Smoke post. Benefiting from the Evolution in Power Transistors, such as Gate Injection Transistors and Cascode Silicon Carbide Transistors. Gate Injection Transistor: https://www.mouser.com/applications/wide-bandgap-gan-transistor/ "Panasonic PGA26E X-GaN Power Transistors Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss. FEATURES Crystal growth of X-GaN on 6" silicon substrate 600V enhancement mode power switch Normally-Off operation with a single X-GaN device by proprietary Gate Injection Transistor (GIT) technology Extremely high-speed switching characteristics Zero recovery loss characteristics" See the GiT link: https://www.mouser.com/Panasonic/Semiconductors/Discrete-Semiconductors/Transistors/Newest-Products/_/N-ax1rp?P=1z13zdy See also, look for Panasonic: http://www.bodospower.com/restricted/downloads/bp_2014_07.pdf http://www.bodospower.com/restricted/downloads/bp_2017_02.pdf http://www.bodospower.com/restricted/downloads/bp_2017_05.pdf http://www.bodospower.com/pdf/bp_2018_07.pdf ---------------------------------------- Cascode Silicon Carbide Transistors: "Benefiting from the Evolution in Power Transistors" and "A Novel Circuit Topology for Turning a ‘Normally On’ GaN Transistor into ‘Normally Off’ that Can be Driven by Popular Drivers": https://www.bodospower.com/restricted/downloads/bp_2018_06.pdf See http://unitedsic.com for related parts and applications notes such as: "Cascode Configuration Eases Challenges of Applying SiC JFETs" http://unitedsic.com/wp-content/uploads/2017/01/USCi_AN0004-Cascode-Configuration-Eases-Challenges-of-Applying-SiC-JFETs.pdf Order from: https://www.mouser.com/search/refine.aspx?N=4248705613 -- http://blog.softwaresafety.net/ http://www.designer-iii.com/ http://www.wearablesmartsensors.com/
[2/2] Re: [EVGRAY] Benefiting from the Evolution in Power Transistors or smoke saver
2018-11-24T14:35:31-08:00
·
Mick
<[email protected]>
Message-ID:
<[email protected]>
Bob, I was talking to a designer of a switching RF amp the other day. I asked him if he tried the new SiC chips rather than the MOSFET he uses for the output. He said he had tried a bunch but they don't last. I looked at his favorite FET datasheet and between the gate and source is a pair of counter facing series zeners build into the wafer. I asked did you try putting similar on the board, no he said space was lacking. So if anybody is losing the magic smoke I suggest they try the Zener trick and Ole can likely tell us the proper name of this protection topology rather than smoke saver. On 11/24/2018 8:37 AM, Bob Paddock [email protected] [EVGRAY] wrote: > > > One of the other treads was discussing the destruction of MOSFETs, > which motivated me to write these few posts, where I normally just > lurk here. > > Related to my Magick Smoke post. > > Benefiting from the Evolution in Power Transistors, such as Gate > Injection Transistors and Cascode Silicon Carbide Transistors. > > Gate Injection Transistor: > > https://www.mouser.com/applications/wide-bandgap-gan-transistor/ > > "Panasonic PGA26E X-GaN Power Transistors > > Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V > Gallium Nitride power devices based on Gate Injection Transistor (GiT) > technology. PGA26E X-GaN power devices deliver Normally-Off operation > with extremely high-speed switching characteristics and zero recovery > loss. > > FEATURES > Crystal growth of X-GaN on 6" silicon substrate > 600V enhancement mode power switch > Normally-Off operation with a single X-GaN device by proprietary Gate > Injection Transistor (GIT) technology > Extremely high-speed switching characteristics > Zero recovery loss characteristics" > > See the GiT link: > https://www.mouser.com/Panasonic/Semiconductors/Discrete-Semiconductors/Transistors/Newest-Products/_/N-ax1rp?P=1z13zdy > > See also, look for Panasonic: > http://www.bodospower.com/restricted/downloads/bp_2014_07.pdf > http://www.bodospower.com/restricted/downloads/bp_2017_02.pdf > http://www.bodospower.com/restricted/downloads/bp_2017_05.pdf > http://www.bodospower.com/pdf/bp_2018_07.pdf > > ---------------------------------------- > > Cascode Silicon Carbide Transistors: > > "Benefiting from the Evolution in Power Transistors" > > and > > "A Novel Circuit Topology for Turning a ‘Normally On’ GaN Transistor > into ‘Normally Off’ that Can be Driven by Popular Drivers": > > https://www.bodospower.com/restricted/downloads/bp_2018_06.pdf > > See http://unitedsic.com for related parts and applications notes such as: > > "Cascode Configuration Eases Challenges of Applying SiC JFETs" > http://unitedsic.com/wp-content/uploads/2017/01/USCi_AN0004-Cascode-Configuration-Eases-Challenges-of-Applying-SiC-JFETs.pdf > > Order from: > https://www.mouser.com/search/refine.aspx?N=4248705613 > > -- > http://blog.softwaresafety.net/ > http://www.designer-iii.com/ > http://www.wearablesmartsensors.com/ > >
← Previous
Page 1 of 1
Next →