Body
One of the other treads was discussing the destruction of MOSFETs,
which motivated me to write these few posts, where I normally just
lurk here.
Related to my Magick Smoke post.
Benefiting from the Evolution in Power Transistors, such as Gate
Injection Transistors and Cascode Silicon Carbide Transistors.
Gate Injection Transistor:
https://www.mouser.com/applications/wide-bandgap-gan-transistor/
"Panasonic PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V
Gallium Nitride power devices based on Gate Injection Transistor (GiT)
technology. PGA26E X-GaN power devices deliver Normally-Off operation
with extremely high-speed switching characteristics and zero recovery
loss.
FEATURES
Crystal growth of X-GaN on 6" silicon substrate
600V enhancement mode power switch
Normally-Off operation with a single X-GaN device by proprietary Gate
Injection Transistor (GIT) technology
Extremely high-speed switching characteristics
Zero recovery loss characteristics"
See the GiT link:
https://www.mouser.com/Panasonic/Semiconductors/Discrete-Semiconductors/Transistors/Newest-Products/_/N-ax1rp?P=1z13zdy
See also, look for Panasonic:
http://www.bodospower.com/restricted/downloads/bp_2014_07.pdf
http://www.bodospower.com/restricted/downloads/bp_2017_02.pdf
http://www.bodospower.com/restricted/downloads/bp_2017_05.pdf
http://www.bodospower.com/pdf/bp_2018_07.pdf
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Cascode Silicon Carbide Transistors:
"Benefiting from the Evolution in Power Transistors"
and
"A Novel Circuit Topology for Turning a ‘Normally On’ GaN Transistor
into ‘Normally Off’ that Can be Driven by Popular Drivers":
https://www.bodospower.com/restricted/downloads/bp_2018_06.pdf
See http://unitedsic.com for related parts and applications notes such as:
"Cascode Configuration Eases Challenges of Applying SiC JFETs"
http://unitedsic.com/wp-content/uploads/2017/01/USCi_AN0004-Cascode-Configuration-Eases-Challenges-of-Applying-SiC-JFETs.pdf
Order from:
https://www.mouser.com/search/refine.aspx?N=4248705613
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